VPE - Application



- Sticking free MEMS release
- Structure thinning
- Dicing free release of structures on SOI substrates
- Etch-rate adjustable from 0 to about 30 µm/h
- Single side SiO2 etching (back-side protected during process)

Release of Comb Drive Structure

Sticking free release of Comb drives with 1 µm gap between adjacent comb fingers (Picture source: Idonus Sarl)

Dicing free Release of Optical MEMS

Intelligent double sided deep reactive ion etching enables dicing free release of chips on wafer level (Picture source: IMT University of Neuchatel)

Structure Thinning

Consecutive oxidation and HF VPE enables the fabrication of sub-micron diameter torsion beams (Picture source: IMT University of Neuchatel)

Photonic Bandgap

Nanometric membranes on thin sacrificial layers can easily be released (Picture source: IMT University of Neuchatel)

Isle Structures

Timed etching allows the fabrication of isle structures (bright) that are only suspended by the remaining SiO2. The darker structures are released. (Picture source: IMT University of Neuchatel)

Thin Film Applications

0.5 µm thick Poly-silicon beams released on 1 µm thermal SiO2: The width of the beams is 10 µm, the length varies from 100 to 500 µm (Picture source: Idonus Sarl)

Etch Rates of small Openings

The holes were dry-etched into 0,5 µm of poly-silicon deposited on 1 µm of thermal SiO2. The etch rate of the sacrificial SiO2 depends on the diameter of the opening. Neither sticking nor "bad wetting" (liquids that do not diffuse into small holes) of the small openings occurred. (Picture source: Idonus Sarl)

Aluminum Structures

Aluminum structures on SiO2 can be released. The high stress in the aluminum cantilevers causes a strong curling. The 0,5 µm thick aluminum layer was deposited on 1 µm thermal SiO2. (Picture source: Idonus Sarl)