VPE - TCRC

Reaction chamber temperature control

The etch rate of silicon dioxide varies slightly with the temperature of the liquid HF in the reaction chamber. The temperature of the HF depends on the ambient temperature of the clean room. Additionally, the HF heats during long etching processes, which results in an increasing etch rate from wafer to wafer until the system has stabilized. To stabilize the etch rate we have developed a reaction chamber with temperature controlled HF in the container. The temperature of the HF can be adjusted with an additional controller. A Peltier element heats or cools the acid depending on the desired process parameters.