Very high aspect ratio structures etched in silicon are desired in many microtechnology applications. Exploring a new process of metal assisted chemical etching in hydrofluoric (HF) acid vapor phase for the fabrication of nanowires and X-Ray optics, our partners at Paul Scherrer Institute (PSI) have published some impressive results in Nanoscale Horizons:

Image Source: Lucia Romano et al., Metal assisted chemical etching of silicon in the gas phase: a nanofabrication platform for X-ray optics, Nanoscale Horiz., 2020,5, 869-879, May 2020 (DOI: 10.1039/C9NH00709A) - Published by The Royal Society of Chemistry.

• 10-100 nm nanowires
• more than 100 µm length
• ultra-high aspect ratio (10'000:1)
• linear and circular gratings for X-Ray optics

The process uses idonus HF Vapor Phase Etcher (VPE) and opens possibilities for a whole new range of applications. Used by many research institutes and MEMS fabrication facilities around the world, HF Vapor Phase Etcher is one of the most versatile, cost-effective and safe equipment of its kind on the market.

VPE series

HF Vapor Phase Etcher systems

other idonus products:

UV-EXP series

Photolithography exposure systems

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